Wenhe Yang 1,2Nan Lin 1,2,*Xin Wei 1,2Yunyi Chen 1,2[ ... ]Jianda Shao 2,**
Author Affiliations
Abstract
1 School of Microelectronics, Shanghai University, Shanghai 200072, China
2 Department of Precision Optics Engineering, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Overlay (OVL) for patterns placed at two different layers during microchip production is a key parameter that controls the manufacturing process. The tolerance of OVL metrology for the latest microchip needs to be at nanometer scale. This paper discusses the influence on the accuracy and sensitivity of diffraction-based overlay (DBO) after developing inspection and after etching inspection by the asymmetrical deformation of the OVL mark induced by chemical mechanical polishing or etching. We show that the accuracy and sensitivity of DBO metrology can be significantly improved by matching the measuring light wavelength to the thickness between layers and by collecting high-order diffraction signals, promising a solution for future OVL metrology equipment.
diffraction-based overlay overlay metrology accuracy lithography semiconductor microchip 
Chinese Optics Letters
2023, 21(7): 071204
李一鸣 1,2杨霖 3王晓浩 1单硕楠 1[ ... ]李星辉 1,2,4,*
作者单位
摘要
1 清华大学深圳国际研究生院,广东 深圳 518055
2 鹏城实验室,广东 深圳 518055
3 工业和信息化部电子第五研究所,广东 广州 511370
4 清华-伯克利深圳学院,广东 深圳 518055

集成电路制造中光刻工艺特征尺寸不断减小,制造商对套刻误差指标的要求逐步提升,对具有亚纳米精度的套刻误差测量技术与系统有极为迫切的需求。针对该需求,对比介绍了基于衍射原理的套刻测量(DBO)和基于图像的套刻测量(IBO)技术原理与特点;在对比分析中,针对具有更高精度测量能力的DBO路线,梳理了其技术发展脉络,对DBO技术中存在的挑战和未来的发展方向进行了论述。所述内容有望为我国先进节点光刻机的独立自主开发提供技术参考。

光刻工艺 集成电路 基于衍射的套刻误差测量 基于图像的套刻误差测量 
激光与光电子学进展
2022, 59(9): 0922023

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