中国激光
2023, 50(24): 2402101
1 中国科学院半导体研究所光电子器件国家工程研究中心,北京 100083
2 中国科学院大学材料科学与光电技术学院,北京 100049
3 北京大学信息科学技术学院,北京 100871
为了提高应用于光纤激光器的多量子阱半导体可饱和吸收镜(SESAM)的特性参数,对其结构进行优化,模拟分析了不同量子阱周期数对器件电场分布、调制深度及反射光谱等参数的影响,结果表明,SESAM中吸收层量子阱周期数越大,SESAM在1064 nm处的反射率越低,调制深度越高,在低反射率处的带宽越窄,可饱和吸收镜对生长误差的容忍度也越小。利用金属有机化合物气相沉积(MOCVD)方法对3种量子阱周期数结构的SESAM进行外延生长,通过非线性测试及锁模实验对3种结构的样品进行测量与表征,结果表明,3种结构的SESAM均实现了自启动锁模,其稳定锁模的泵浦区间为150~200 mW。采用泵浦探测技术对15个量子阱周期的SESAM进行动态响应测试,其响应恢复时间为5 ps。
激光器 超快激光器 半导体可饱和吸收镜 泵浦探测 lasers ultrafast lasers semiconductor saturable absorber mirror pump-probe 光学学报
2023, 43(22): 2214001
中国激光
2023, 50(17): 1714013
1 北京航空航天大学电子信息工程学院,北京 100191
2 中国科学院物理研究所北京凝聚态物理国家实验室,北京 100190
3 北京航空航天大学网络空间安全学院,北京 100191
4 北京航空航天大学微波感知与安防应用北京市重点实验室,北京 100191
强场太赫兹(THz)时域光谱技术在强场THz科学技术与应用中具有重要作用,材料、物理、化学、生物等领域诸多涉及强场THz与物质强非线性相互作用的研究都离不开强场THz时域光谱技术。然而,受限于高效率、高光束质量、高稳定性、高重复频率强场THz辐射源的性能,强场THz时域非线性光谱技术发展缓慢。针对强场THz非线性光谱技术及其潜在应用中存在的难题与挑战,在商用kHz钛宝石激光器的驱动下,笔者设计并实现了一套基于铌酸锂倾斜波前技术产生强场THz的高度集成化时域光谱系统。在3 mJ激光能量泵浦下,利用该系统在室温下实现了单脉冲能量为6.5 μJ、峰值场强约为350 kV/cm的THz强场产生,该系统具备强场THz非线性光谱测试、THz泵浦‑THz探测、光泵浦‑THz探测、THz发射谱测量等多种超快时间分辨测量功能,是研究强场THz非线性效应的有效实验手段。
超快光学 强场THz辐射 铌酸锂 非线性光谱 泵浦‑探测 ultrafast optics strong-field terahertz radiation lithium niobate nonlinear spectrum pump-probe 中国激光
2023, 50(17): 1714012
中国激光
2023, 50(17): 1714002

Author Affiliations
Abstract
1 Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
2 Harbin Institute of Technology, Harbin 150001, China
ZnGeP2 (ZGP) crystals have attracted tremendous attention for their applications as frequency conversion devices. Nevertheless, the existence of native point defects, including at the surface and in the bulk, lowers their laser-induced damage threshold by increasing their absorption and forming starting points of the damage, limiting their applications. Here, native point defects in a ZGP crystal are fully studied by the combination of high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and optical measurements. The atomic structures of the native point defects of the Zn vacancy, P vacancy, and Ge-Zn antisite were directly obtained through an HAADF-STEM, and proved by photoluminescence (PL) spectra at 77 K. The carrier dynamics of these defects are further studied by ultrafast pump-probe spectroscopy, and the decay lifetimes of 180.49, 346.73, and 322.82 ps are attributed to the donor Vp+ → valence band maximum (VBM) recombination, donor GeZn+ → VBM recombination, and donor–acceptor pair recombination of Vp+ → VZn-, respectively, which further confirms the assignment of the electron transitions. The diagrams for the energy bands and excited electron dynamics are established based on these ultrahigh spatial and temporal results. Our work is helpful for understanding the interaction mechanism between a ZGP crystal and ultrafast laser, doing good to the ZGP crystal growth and device fabrication.
ZnGeP2 crystal point defects HAADF-STEM photoluminescence pump-probe spectroscopy Chinese Optics Letters
2023, 21(4): 041604
激光与光电子学进展
2023, 60(5): 0500002
光子学报
2022, 51(12): 1214003