Opto-Electronic Science

2022, 1(6) Column


Opto-Electronic Science 第1卷 第6期

Jun Ren 1,2Han Lin 1,5,6Xiaorui Zheng 1Weiwei Lei 3[ ... ]Baohua Jia 1,5,6,*
Author Affiliations
1 Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P. O. Box 218, Hawthorn, Victoria 3122, Australia
2 School of Integrated circuits, Tsinghua University, Haidian, Beijing 100084, China
3 Institute for Frontier Materials, Deakin University, Geelong, Victoria 3216, Australia
4 Institute of Laser Engineering, Beijing University of Technology, Chaoyang, Beijing 100124, China
5 The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
6 School of Science, RMIT University, Melbourne, Victoria 3000, Australia
Recently, hexagonal boron nitride (h-BN) has become a promising nanophotonic platform for on-chip information devices due to the practicability in generating optically stable, ultra-bright quantum emitters. For an integrated information-processing chip, high optical nonlinearity is indispensable for various fundamental functionalities, such as all-optical modulation, high order harmonic generation, optical switching and so on. Here we study the third-order optical nonlinearity of free-standing h-BN thin films, which is an ideal platform for on-chip integration and device formation without the need of transfer. The films were synthesized by a solution-based method with abundant functional groups enabling high third-order optical nonlinearity. Unlike the highly inert pristine h-BN films synthesized by conventional methods, the free-standing h-BN films could be locally oxidized upon tailored femtosecond laser irradiation, which further enhances the third-order nonlinearity, especially the nonlinear refraction index, by more than 20 times. The combination of the free-standing h-BN films with laser activation and patterning capability establishes a new promising platform for high performance on-chip photonic devices with modifiable optical performance.
hexagonal boron nitride third-order nonlinearity laser oxidation optoelectronic device 
Opto-Electronic Science
2022, 1(6): 210013
Author Affiliations
1 State Key Laboratory of Precision Spectroscopy, School of Physics and Materials Science, East China Normal University, Shanghai 200062, China
2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
3 State Key Laboratory of Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
Over the past two decades, femtosecond laser-induced periodic structures (femtosecond-LIPSs) have become ubiquitous in a variety of materials, including metals, semiconductors, dielectrics, and polymers. Femtosecond-LIPSs have become a useful laser processing method, with broad prospects in adjusting material properties such as structural color, data storage, light absorption, and luminescence. This review discusses the formation mechanism of LIPSs, specifically the LIPS formation processes based on the pump-probe imaging method. The pulse shaping of a femtosecond laser in terms of the time/frequency, polarization, and spatial distribution is an efficient method for fabricating high-quality LIPSs. Various LIPS applications are also briefly introduced. The last part of this paper discusses the LIPS formation mechanism, as well as the high-efficiency and high-quality processing of LIPSs using shaped ultrafast lasers and their applications.
laser-induced periodic structures (LIPSs) formation mechanisms femtosecond pulse shaping pump-probe imaging structural color birefringent effects optical absorption photoluminescence 
Opto-Electronic Science
2022, 1(6): 220005