Chinese Optics Letters, 2005, 3 (7): 07428, Published Online: Jun. 6, 2006
Effects of oxygen partial pressure on optical absorption edge and UV emission energy of ZnO films Download: 888次
310.0310 thin films 300.6470 spectroscopy semiconductors 310.6860 thin films optical properties 170.6280 spectroscopy fluorescence and luminescence
Abstract
The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.
Ruijin Hong, Jianda Shao, Hongbo He, Zhengxiu Fan. Effects of oxygen partial pressure on optical absorption edge and UV emission energy of ZnO films[J]. Chinese Optics Letters, 2005, 3(7): 07428.