提高发光二极管的发光效率是当前的一个研究热点。简要介绍了从芯片技术角度提高发光二极管(LED)外量子效率的几种途径,生长分布布拉格反射层结构、制作透明衬底、衬底剥离技术、倒装芯片技术、表面粗化技术、异形芯片技术、采用光子晶体结构等。此外还介绍了发光材料、能带结构以及工艺对外量子效率的影响。

The research on improving the light-emitting efficiency of light-emitting-diodes is a hotspot. Several approaches to enhance the external quantum efficiency of LED are discussed, such as growth of distributed Bragg reflector (DBR) tabricat-ing, transparent substrates technology, surface lift-off, flip-chip, surface roughening, unusual chip and photonic crystal structure. The effects of light- emitting materials, energy gap and process condition on the external quantum efficiency are also discussed.