液晶与显示, 2014, 29 (5): 668, 网络出版: 2014-08-18
L0周边Mura分析及其改善研究
Research and improvement of L0 side Mura
摘要
L0周边Mura是TFTLCD的一种常见缺陷。本文对L0周边Mura发生原因进行分析,发现真空对盒工艺进行过程中玻璃基板表面受力不均使力学合成力较少的局部位置发生形变并引起液晶屏周边区域盒厚波动,产生不良。采用辅助封框胶开环方式,主封框胶内外两侧压差趋于平衡,L0周边Mura发生率大幅降低;而通过优化辅助封框胶工艺有效地解决了周边区域力学失衡难题,不良发生率降至0.3%,改善效果明显。此外,周边优化设计方案有助于新产品开发阶段避免该不良发生。
Abstract
L0 Side Mura is the common defect of TFTLCD. After analyzing the stress status of panel surrounding area, the root cause can be revealed. It can be found that the stress distribution of glass substrate is quite uneven during cell assembly process, and this induced the deformation under the influence of smaller resultant force in local area, then caused cell gap fluctuating around the panel and generate defect. To solve this issue, dummy seal open mode was applied to make differential pressure between inside and outside the main seal on both sides into balance, which reduced the failure rate slightly lower. Nevertheless, the incidence of L0 Side Mura can be effectively reduced to 03% by improving dummy seal process to solve the problem of mechanics imbalance in certain. Furthermore, it will be avoided in development stage of new product through optimizing design scheme around Panel.
王志龙, 郑英花, 马亮, 朱载荣, 孙鹏, 廖燕平. L0周边Mura分析及其改善研究[J]. 液晶与显示, 2014, 29(5): 668. WANG Zhilong, ZHENG Yinghua, MA Liang, ZHU Zairong, SUN Peng, LIAO Yanping. Research and improvement of L0 side Mura[J]. Chinese Journal of Liquid Crystals and Displays, 2014, 29(5): 668.