薄膜应力的存在是薄膜材料的本征特性, 对过程中薄膜应力的测量与精确控制具有重要意义。搭建了基于双光束偏转基底曲率测量装置, 再结合薄膜厚度的实时监控, 实现了对薄膜应力演化过程的观测。对HfO2薄膜的生长过程做了实时研究。结果显示, 在所研究条件下, HfO2薄膜的生长应力随厚度的增加, 在360～660 MPa范围内变化; 沉积温度越高, 沉积真空度越高, 张应力越大; 在真空度较高的沉积条件下, 薄膜应力强烈地受到基底表面的影响, 随着薄膜厚度的增加, 应力也趋于稳定。

Stress is a property of thin film material. It's important to develop in-process observation and control it accurately. An instrument for real-time stress measurement based on optical deflection of two parallel light beams was presented. Combined with the crystal monitor, we can observe the evolution of thin film stress in process. This instrument was applied to observe the process of deposition of HfO2 film. The results show that HfO2 films have a stable tensile stress of 360～660 MPa for the given deposition conditions. The tensile stress becomes larger when the vacuum or the temperature of substrate is higher. The stress was affected intensively by the substrate surface, and was stable with the increment of thin film thickness in high vacuum conditions.