针对CMOS成像器件结构的特殊性，发展并提出了“像元光子转移技术”法测量增益和读出噪声。同时对CMOS器件的线性度、满阱电荷、暗流、不均匀性和量子效率等性能的测试方法进行了研究。最后基于2 k×2 k CMOS芯片进行了性能测试实验，实验结果验证了该测试方法的可行性和可靠性。

Photon-transfer technique for single pixel is developed to measure the readout noise and gain of CMOS imager in consideration of its special structure. The methods to evaluate the linearity,well capacity,dark current,pixel non-uniformity and quantum efficiency are also discussed. At last,evaluation test is carried out based on a 2 k×2 k CMOS sensor. The experiments show that the evaluation method is feasible and reliable.