强激光与粒子束, 2010, 22 (3): 565, 网络出版: 2010-05-28   

基于金属氧化物半导体场效应管的Marx发生器

Marx generator using metal-oxide-semiconductor field-effect transistors
作者单位
清华大学 电机工程与电子应用技术系,北京 100084
摘要
给出了一种基于半导体开关的脉冲功率源的设计原理和方法。与标准的Marx发生器相比,用金属氧化物半导体场效应管(MOSFET)替代气体火花隙开关,用二极管替代电阻,由于可重复频率运行,所以能够有效地减少电路损耗。由于电路器件特性差异不同,在实验中采取对每一级的开关驱动信号进行单独调节,以补偿器件差异对同步性带来的影响。另外,实验对开关进行光纤隔离,而对强弱电的隔离采用DC-DC转换器,这不仅有利于保护实验设备,而且对Marx多级电路的同步性也有很大的贡献。设计的Marx发生器级数为16级,并给出了单次脉冲和重复频率两种情况下的实验结果。
Abstract
A new design method of pulsed power generatior based on semiconductor switches has been studied. The generator using metal-oxide-semiconductor field-effect transistors(MOSFETs) can work in high repetition rate,and can also reduce the circuit loss effectively due to the unique circuit structure. The crux of the experiment is how to synchronize all the drive signals of the semiconductor switches. The measure that regulating each drive signal was taken to compensate the influence caused by the difference of each device. Meanwhile special efforts were made on the issues of isolation,such as the optical isolation for the switching signals and the isolated DC-DC converters for power supply,which are important not only for operation synchronization but also for device protection. The Marx generator designed had sixteen stages,and the experimental results of both single pulse and repeated pulse were calculated.

刁文豪, 江伟华, 王新新. 基于金属氧化物半导体场效应管的Marx发生器[J]. 强激光与粒子束, 2010, 22(3): 565. Diao Wenhao, Jiang Weihua, Wang Xinxin. Marx generator using metal-oxide-semiconductor field-effect transistors[J]. High Power Laser and Particle Beams, 2010, 22(3): 565.

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