掌握微波辐照下的电子态性质是理解高迁移率二维电子气在低磁场区的纵向电阻振荡和零电阻态等新奇物理现象的关键.基于反射率测量的微波回旋共振技术(RODCR), 研究了高迁移率、低浓度GaAs/Al0.35Ga0.65As二维电子气在Ka波段微波辐照下的电子态性质.通过在不同条件下的RODCR测量, 具体讨论了微波交变电场方向、入射激光波长和温度等因素对RODCR测量结果的影响规律.研究结果表明, RODCR测量技术为研究二维电子系统的电子态性质提供了简便而有力的手段.

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al035Ga065As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.