利用单晶硅在KOH溶液中的各向异性刻蚀特性，在相对Si(111)面切偏角为5°的单晶片上制作了1 200 gr/mm的真空紫外闪耀光栅。结合全息干涉曝光以及光刻胶灰化技术，在单晶硅表面得到了小占宽比的高质量光刻胶掩模，用湿法刻蚀将光栅掩模图形转移到单晶硅表面的天然氧化层上，并将其作为硅各向异性湿法刻蚀的掩模，成功获得了接近于理想锯齿槽形的闪耀光栅。用原子力显微镜分析光栅闪耀面，结果表明其表面均方根粗糙度约为0.2 nm。在真空紫外波段对其进行衍射效率测量，发现光栅在135 nm波长处显示出良好的闪耀特性。此方法可以应用于真空紫外和软X射线波段的光栅制作，在获得较高的槽形效率的同时，可以大大减少其制作难度及成本。

In combination with holographic interferometry and the photoresist ashing, a straight and clean photoresist mask with a small line-to-period was fabricated on off-cut silicon (111) wafers. Then,the wet etching method was used to transfer the grating mask pattern on the native oxide layer as the mask of anisotropic etching to obtain the near-ideal grooves of sawtooth. With the blazed grating profile well controlled by this technique, a 1 200 gr/mm blazed grating with a blaze angle of 5.0° and smooth blaze facets about 0.2 nm (RMS) was fabricated. An atomic force microscopy was used to analyze the grating surface,results show that the surface roughness(RMS) is about 0.2 nm,and the diffraction efficiency measurement for the grating shows that the grating can offer excellent blaze properties at the wavelength of 135 nm. It is concluded that high-groove-efficiency blazed gratings used in the vacuum ultraviolet and soft X-ray wavelengths can be easily fabricated by this method at normal or near-normal incidences.