采用射频磁控溅射法在p型自支撑金刚石衬底上制备了高度c轴取向的n型氧化锌薄膜。研究了不同的溅射功率对氧化锌薄膜质量的影响。通过半导体特性分析系统测试了氧化锌/金刚石异质结的电流-电压特性, 结果显示该异质结二极管具有良好的整流特性, 开启电压约为1.6 V。在此基础上制备了结型紫外光探测器, 并对其光电性能进行了研究。结果表明, 在施加反向偏压的条件下, 该探测器对紫外光具有明显的光响应。

Highly c-axis oriented n-type ZnO films were grown on the p-type fresstanding diamond(FSD) substrates by radio-frequency (RF) magnetron sputtering method. The effects of the sputtering power on the pro-perties of ZnO films were studied. Current-voltage (I-V) characteristics of the ZnO/diamond heterojunction were examined by a semiconductor characterization system and the results showed a distinct rectifying characteristics with a turn-on voltage of about 1.6 V. The ZnO/diamond heterojunction diode was also used for ultraviolet(UV) detector application and the detector showed a significant discrimination between the UV light and the visible light under reverse bias conditions.