选择3种典型光电耦合器开展了反应堆中子辐照实验，中子注量为3×1011~5×1012cm-2时，位移效应导致电流传输比下降，饱和压降提高。发光器件相同,探测器为Si PIN光电二极管的光电耦合器比探测器为Si NPN光敏晶体管的光电耦合器的初始电流传输比要小，但其抗位移损伤能力更强。探测器均为Si NPN光敏晶体管，发光器件为异质结LED要比硅两性掺杂LED的光电耦合器的电流传输比抗位移损伤能力提高2个量级；以光敏晶体管为探测器的光电耦合器，在较大的正向电流和输出负载电阻条件下工作可提高抗辐射水平。此外，光电耦合器的位移损伤存在加电退火效应。

The reactor neutron irradiation on three types of optocouplers was experimentally studied. Current transfer ratio decreased and saturation voltage increased due to displacement damage in the range of neutron fluence from 3×1011cm-2 to 5×1012 cm-2. The degradation of light emitting diode(LED) optical power, phototransistor gain and photoresponsivity all contribute to the degradation of optocouplers’ performance. The optocouplers with PIN as detector have a much lower current transfer ratio but they are more resistant to displacement damage compared with optocouplers with phototransistor as detector on condition that both kinds of optocouplers use identical LEDs. The radiation tolerance of optocouplers with heterojunction LED is two orders of magnitude higher than that of optocouplers with amphoterically Si doped LEDs when both of them use Si NPN phototransistor as detector. Working under the condition of larger forward current and end load can enhance radiation hardness of optocouplers. In addition, injection-enhanced annealing of displacement damage can occur in optocoupler.