红外技术, 2010, 32 (12): 701, 网络出版: 2011-04-28
基于热释光谱的ZnS:Cu,Pb,Mn材料陷阱深度研究
Study on Trap Depth of ZnS:Cu, Pb, Mn Based on Thermoluminescence Spectra
热释光 Mn样品 红外激励发光 陷阱深度 thermoluminescence sample of ZnS:Cu ZnS:Cu Pb Pb Mn infrared stimulated luminescence trap depth
摘要
利用热释光计量仪测得ZnS:Cu,Pb,Mn样品的热释光谱，以Gauss函数拟合的方式，对样品的热释光谱进行分析。并依据热释光动力学原理和Chen的峰形法，分别计算出各分峰谱线的陷阱深度E和频率因子s的具体数值。结果表明，ZnS:Cu,Pb,Mn材料中存在4个电子陷阱，E和s的值分别为：0.7969 eV、1.0745 eV、1.3999 eV、1.6593 eV；1.3800×1011 s－1、1.0385×1014 s－1、2.3186×1017 s－1、3.2718×1019 s－1。此计算结果与材料红外激励谱得到的结果基本一致，对进一步研究ZnS:Cu,Pb,Mn材料的发光机理及其微观过程提供了依据。
Abstract
Thermoluminescence (TL) curve of ZnS:Cu,Pb,Mn measured by TL meter is evaluated by Gaussian fitting. The trap depth E and frequency factor s of the samples are calculated by using thermoluminescent kinetics models and the peak shape method proposed by Chen. According to the calculation, there are four electron traps in ZnS:Cu,Pb,Mn, and the values of the E and s are 0.7969 eV、1.0745 eV、1.3999 eV、1.6593 eV；1.3800×1011 s－1、1.0385×1014 s－1、2.3186×1017 s－1、3.2718×1019 s－1, respectively. The results are in accordance with the results from infrared stimulation curve, and provide evidences for further study of the thermoluminescent mechanism and microcosmic process of the ZnS:Cu,Pb,Mn.
吴先权, 华文深, 赵莉君, 谢大兵, 李晓明. 基于热释光谱的ZnS:Cu,Pb,Mn材料陷阱深度研究[J]. 红外技术, 2010, 32(12): 701. WU Xian-quan, HUA Wen-shen, ZHAO Li-jun, XIE Da-bing, LI Xiao-ming. Study on Trap Depth of ZnS:Cu, Pb, Mn Based on Thermoluminescence Spectra[J]. Infrared Technology, 2010, 32(12): 701.
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