发光学报, 2011, 32 (7): 729, 网络出版: 2011-08-10
多层栅介质层有机薄膜晶体管的存储与光响应特性
Memory and Photo-responses Characteristics of Organic Thin Film Transistors Based on Multi-layer Gate Dielectric
摘要
在真空室内一次性制备了具有多层栅介质层结构的有机薄膜晶体管(OTFTs)。结果表明, 制备的OTFTs具有电控开关、存储和光敏多重功能特性。分析认为, 存储特性归功于器件的结构, 采用了分离的CaF2纳米粒子岛作为电荷俘获中心。在光照环境下, 观察到了两种不同类型的光响应特性。快速的光响应来自于有源层吸收了能量大于带隙的光子所产生的可移动的电荷, 慢的光响应归因于电场作用下光感应的电子在栅介质陷阱的俘获与释放。
Abstract
The organic thin film transistors (OTFTs) based on multi-layer gate dielectric were presented without vacuum breaks. As a result, the OTFTs show multi-functional properties, such as electric-switching, memory, and photosensitive. The memory effect was attributed to the structure of OTFTs, i.e. the utilization of the separated CaF2 nanoparticle islands acting as the charge trapping centers. The photo-responses included two different types of fast response and slow response, and are, respectively, originated from the generation of mobile carriers by the absorption of photo energy higher than the band gap energy of semiconductor and the tapped and released of photo-induced electrons by the traps in the dielectric at the electrical field modulation.
王伟, 马东阁, 高强, 石家纬, 曹军胜. 多层栅介质层有机薄膜晶体管的存储与光响应特性[J]. 发光学报, 2011, 32(7): 729. WANG Wei, MA Dong-ge, GAO Qiang, SHI Jia-wei, CAO Jun-sheng. Memory and Photo-responses Characteristics of Organic Thin Film Transistors Based on Multi-layer Gate Dielectric[J]. Chinese Journal of Luminescence, 2011, 32(7): 729.