半导体光子学与技术, 2005, 11 (1): 28, 网络出版: 2011-08-18
Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy
Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy
摘要
Abstract
Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.
YE Hao-hua, YU Guang-hui, LEI Ben-liang, QI Ming, LI Ai-zhen. Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy[J]. 半导体光子学与技术, 2005, 11(1): 28. YE Hao-hua, YU Guang-hui, LEI Ben-liang, QI Ming, LI Ai-zhen. Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy[J]. Semiconductor Photonics and Technology, 2005, 11(1): 28.