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High Purity and Large-scale Preparation ofβ-Ga2O3Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics

High Purity and Large-scale Preparation ofβ-Ga2O3Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics

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Abstract

Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre-coated(111) silicon substrates with chemical vapor deposition(CVD) technique. By evaporating pure Ga powder in the H-O atmosphere under ambient pressure the large-scale preparation ofβ-Ga2O3with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3nano-structures are characterized by means of scanning electron microscope(SEM), X-ray diffraction(XRD), selected area electron diffraction (SAED) and transmission electron microscope(TEM). Raman spectrum reveals the typical vibration modes of Ga2O3. The vibration mode shifts corresponding to Ga2O3nano-structures are not found. Two distinguish photoluminescence(PL) emissions are found at about 399 nm and 469 nm owing to the VO2VGaexcitation and VO2VGa2Oexcitation, respectively. The growth mechanisms of Ga2O3nanowires and nanosheets are discussed with vapor-liquid-solid(VLS) and vapor-solid(VS) mechanisms.

Newport宣传-MKS新实验室计划
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中图分类号:TN205

收稿日期:2006-09-28

修改稿日期:2007-04-15

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YU Zhou:Department of Materials Science, Sichuan University, Chengdu 610064, CHN
YANG Zhi-mei:Key Lab of Microelectronics and Technology, Sichuan University, Chengdu 610064, CHN
CHEN Hao:Department of Materials Science, Sichuan University, Chengdu 610064, CHN
WU Zhan-wen:Department of Materials Science, Sichuan University, Chengdu 610064, CHN
JIN Yong:Department of Materials Science, Sichuan University, Chengdu 610064, CHN
JIAO Zhi-feng:Department of Materials Science, Sichuan University, Chengdu 610064, CHN
HE Yi:Analytical and Testing Center, Sichuan University, Chengdu 610064, CHN
WANG Hui:Analytical and Testing Center, Sichuan University, Chengdu 610064, CHN
LIU Jun-gang:Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
GONG Min:Key Lab of Microelectronics and Technology, Sichuan University, Chengdu 610064, CHN
SUN Xiao-song:Department of Materials Science, Sichuan University, Chengdu 610064, CHN

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引用该论文

YU Zhou,YANG Zhi-mei,CHEN Hao,WU Zhan-wen,JIN Yong,JIAO Zhi-feng,HE Yi,WANG Hui,LIU Jun-gang,GONG Min,SUN Xiao-song. High Purity and Large-scale Preparation ofβ-Ga2O3Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics[J]. Semiconductor Photonics and Technology, 2007, 13(2): 155-160

YU Zhou,YANG Zhi-mei,CHEN Hao,WU Zhan-wen,JIN Yong,JIAO Zhi-feng,HE Yi,WANG Hui,LIU Jun-gang,GONG Min,SUN Xiao-song. High Purity and Large-scale Preparation ofβ-Ga2O3Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics[J]. 半导体光子学与技术, 2007, 13(2): 155-160

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