半导体光子学与技术, 2009, 15 (3): 145, 网络出版: 2011-08-19
Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2
Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2
摘要
Abstract
Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition(LF-PECVD) using silane and nitrogen as precursors. Characteristics such as deposition rate, surface morphology, and chemical composition were measured by spectroscopic ellipsometry(SE), atomic force microscope(AFM) and x-ray photoelectron spectroscopy(XPS). It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface. The XPS result indicated that a small quantity of oxygen was involved in the sample, which was discussed in this paper.
ZHONG Zhi-qin, ZHANG Yi, YU Zhi-wei, DAI Li-ping, ZHANG Guo-jun, WANG Yu-mei, WANG Gang, WANG Shu-ya. Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2[J]. 半导体光子学与技术, 2009, 15(3): 145. ZHONG Zhi-qin, ZHANG Yi, YU Zhi-wei, DAI Li-ping, ZHANG Guo-jun, WANG Yu-mei, WANG Gang, WANG Shu-ya. Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2[J]. Semiconductor Photonics and Technology, 2009, 15(3): 145.