用低温光致发光技术,研究了硅单晶中浅能级杂质和热处理引进的缺陷,得到各种浓度掺棚和掺磷的硅的光致发光光渚,并作出了相应的定量分析.实验中已探测到的硼的浓度低达5×10~(11)cm~(-3).观察了光致发光强度与激发光强度的关系,还用光致发光技术分析了450℃附近热处理引进的热施主的行为.结果表明,低温光致发光可以作为测量高纯半导体单晶硅中微量杂质硼和磷的含量及分析热处理硅单晶中的缺陷的有效手段.

The photoluminescence (PL) technique at liquid helium tempera-ture has been applied to characterization of shallow imparities and thermal defects in silicon crystals. A number of PL spectra of B-doped and P-doped Sj with different doping levels have been obtained together with quantitative analysis. A concentration of boron as low as 5×1011 cm-3 in highly pure Si could be detected. The dependence of PL intensity on excitation intensity was investigated. We have also applied the PL technique in the analysis ...