为了提高半导体激光器的抗辐射性能，满足空间应用的需要，在介绍了空间辐射环境的基础上,对空间辐射在半导体激光器中产生的总剂量效应、单粒子翻转效应和位移效应进行了分析,并探讨了半导体激光器在空间辐射环境中相应的抗辐射防护技术。对980nm单模半导体激光器采用了端面镀膜、Al2O3绝缘介质层、真空封装等抗辐射的改进措施，有效地提高了半导体激光器的抗辐射能力。

In order to improve the performance of radiation resistance of semiconductor lasers for space applications, the space radiation environment was introduced, based on which, total dose effects, single event upset effects and displacement effects were analyzed, and the anti-radiation protection technology was discussed. For the 980nm single-mode semiconductor lasers, improvements of facet coating, Al2O3 dielectric layers and vacuum packaging were applied to effectively improve the radiation resistance of semiconductor lasers.