提出了多晶硅表面陷阱坑内表面高次绒面的陷光模型。利用测不准原理，分析了光子散射方向与绒面上凸点大小的关系，利用光学傅里叶变换推导了光子逃逸陷阱坑概率与绒面陷阱坑形貌的关系。理论分析结果表明内表面布满凹凸点的U字形陷阱坑反射率比V字形的低；而内表面光滑的U字形陷阱坑的反射率比V字形的高。利用扫描电子显微镜拍摄了碱液刻蚀的多晶硅样品表面图像，分析了碱液刻蚀的不同晶面陷阱坑的形貌。\[100\]晶面呈峡谷状的陷阱坑，\[111\]晶面呈扭曲的U字形凹坑，\[110\]晶面则显示混合结构。实验测量了样品不同晶面的反射率曲线，证实了U字形陷阱坑的绒面具有相对低的反射率，与理论分析结果基本吻合。

An optimization etching model of the traps surface is proposed for the multicrystalline silicon surfaces. Based on uncertainty principle, the dependence of the photon scattering direction on the size of salient point on the internal surface of trap-pit is studied. The relationship between the topography of pit and the reflectivity is deduced using Fourier transformation. The theoretical analysis results indicate that the U-trap with the internal surface full of salient points has low reflectivity compared with V-trap with the internal surface full of salient points. However, the reflectivity of U-trap with the smooth internal surface is higher than that of the V-trap. The topography of multicrystalline silicon surface in different models textured with alkaline solution are observed by scanning electron microscope. It is found that \[100\], \[111\] and \[110\] planes is covered with canyon-structures, distorted U-trap and hybrid structures, respectively. The reflectances of different crystallographic planes are measured, showing that the U-trap′s reflectance is the smallest. And it proves the proposed model.