A practicable experimental method for measuring scattering on rough surfaces is reported. The scattered patterns are captured on a screen composed of two pieces of ground glass and then imaged using a charge-coupled device. The scattered intensity profiles are extracted by converting the patterns in real space into the wave vector space. Isotropic and anisotropic samples of the rough backsides of silicon wafer are investigated respectively, and their intensity profiles are measured. The profiles of the anisotropic sample are obtained by reading the pixels on the specific orientation curves. The parameters of the samples are extracted using angle-resolved light-scattering schemes and theories. The results well agree with measurements obtained using an atomic force microscope.