半导体光电, 2012, 33 (3): 342, 网络出版: 2012-06-25
双沟平面掩埋结构SLD的液相外延生长及漏电分析
Analysis on Current Leakage in DCPBH-SLD Grown by LPE
摘要
对液相外延生长的双沟平面掩埋异质结(DCPBH)结构超辐射发光二极管(SLD)双沟内漏电现象进行了理论分析与定量计算。在此基础上通过优化外延结构设计与液相生长参数，得到了电流限制较理想的DCPBH结构。
Abstract
The mechanism of current leakage in Double Channel Planar Buried Heterrostructure (DCPBH) superluminescent diode(SLD) with p-n-p-n current blocking structure is theoretical analyzed and quantitative calculated. The ideal lateral current confinement is obtained by optimizing the structure and growth conditions of LPE .
段利华, 方亮, 周勇, 周雪梅, 韩伟峰, 罗庆春, 黄茂. 双沟平面掩埋结构SLD的液相外延生长及漏电分析[J]. 半导体光电, 2012, 33(3): 342. DUAN Lihua, FANG Liang, ZHOU Yong, ZHOU Xuemei, HAN Weifeng, LUO Qingchun, HUANG Mao. Analysis on Current Leakage in DCPBH-SLD Grown by LPE[J]. Semiconductor Optoelectronics, 2012, 33(3): 342.
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