分析了非掺GaSb材料及在GaAs衬底上用分子束外延生长掺杂Te的GaSb薄膜材料的缺陷特性，主要应用正电子湮没多谱勒展宽谱方法，并结合原子力显微镜和X射线衍射测试进行.多谱勒展宽谱研究表明，采用分子束外延法生长的掺杂Te的n型半导体GaSb薄膜材料的S参数比体材料小，所得缺陷主要是单空位与间隙原子，而几乎无复合体的缺陷类型.

In this paper we present the results of positron annihilation doppler broadening spectroscopy (PADB), X-ray diffraction spectra (XRD), and atomic force microscopy (AFM) measurements on the undoped GaSb and Te-doped GaSb films grown on GaAs substrate by molecular beam epitaxy(MBE). Research shows that the S parameter is smaller in GaSb film than the bulk material. The defects in the Te-doped N-type semiconductor GaSb obtained by MBE are mainly vacancies and impurity atoms instead of complex defects.