本文报道用国产分子束外延设备研制出波长为850nm AlGaAs/GaAs多量子阱激光器。室温阈值电流密度为980A/cm~2、条宽8μm的激光器最低室温阈值电流为28mA,线性输出功率大于15mW,单面量子微分效率约24％,具有良好的温度特性(温度从-35℃到+30℃范围内,To=361℃)。

850nm GaAlAs/GaAs multiple quantum well lasers are prepared by a domestic molecular beam epitaxy system.The lasers have threshold current density of 980 A/cm2 at room temperarure, The lasers stripe width of 8um, the lowest room temperature threshold current is 28 mA, a linear power output of 15mW, a differential quantum efficiency per facet of about 24%, and a weak temperature dependence of threshold current density (T0-361℃ in the range of -35℃ to +30℃) are achieved.