通过调节作为发光层的量子点的尺寸, 可以制作出覆盖可见光(380～780 nm)以及近红外光谱的量子点LED(QD-LED), 其光谱范围很窄且半高宽可达30 nm。然而量子点LED的寿命、亮度以及效率需要进一步提高才能满足商业化的需求。为了研究QD-LED器件的特性, 本文采用523 nm波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层, 制备了绿光量子点LED, 并表征了器件的特性。

CdSe/ZnS core-shell QDs (523 nm) were used as emissive layers, poly-TPD as hole-transport layer (HTL) and ZnO as electron-transport layer(ETL). Green-emitting devices based on CdSe QDs were fabricated and characterized. Luminescence of semiconductor nanocrystal quantum dots (QDs) were used as luminescent centers in organic light emitting devices (OLEDs). By changing the size of QD, this OLED can emit visible to near-infrared spectrum with a narrow full-width at half-maximum (FWHM) of ～30 nm. However, the brightness, efficiency, and lifetime of LEDs need to be improved to meet the requirements of commercialization in the near future.