采用射频磁控溅射的方法制备了微量硼掺杂氢化非晶硅薄膜, 对样品的光电导性能进行了研究。结果表明, 不同的硼掺杂量下, 氢化非晶硅薄膜透过率随掺杂量的增加而变大, 透过率曲线截止边红移; 吸收系数随着硼掺杂量的增加而增大; 薄膜的折射率随着波长的增加而下降, 同一波长下随着掺杂量的增加而增大, 在500nm波长处折射率达到4.2以上, 最大到4.6; 薄膜的交流电阻率在微量硼掺杂下随着硼掺杂量的增加先减小后增大。

Light-doped hydrogenated amorphous silicon (a-Si∶H) thin films were prepared by RF magnetron sputtering method and the optoelectronic properties of a-Si∶H films with different doping amount were studied. The results show that with the increase of doping amount of Boron, both the transmission of a-Si∶H thin film and the optical absorption coefficient increase and the absorption edge shifts to long wavelength area. The refractive index of a-Si∶H thin film decreases as the wavelength increase and increases as the doping amount increase, and it can be over 4.2 at the wavelength of 500nm. The AC conductivity decreases and then increases as the doping amount increases under light-doped area.