实验采用60 ns、1064 nm单脉冲激光辐照前照式有源型可见光CMOS探测器，随着损伤程度的加深，分别观察到点损伤、半边黑线损伤以及十字交叉黑线损伤等硬损伤现象。各损伤现象出现时对应的探测器表面激光能量密度分别为0.38、0.64、1.0 J/cm2。进一步提高激光能量密度，观察到十字交叉黑线变粗，覆盖面积扩大。即使激光能量密度达到2.8 J/cm2，此时黑线已经覆盖绝大部分探测器像元，但探测器仍然没有完全失效，未损伤区域还可以成像。基于CMOS样品的结构和工作原理，对损伤机理进行了理论分析，认为点损伤是由于热效应引起结构缺陷从而造成漏电流增加，半边黑线损伤和十字交叉黑线损伤是由于器件电路的熔断导致信号中断。

Using a 60 ns, 1064 nm single-pulse laser to radiate the front illuminated complementary metal oxide semiconductor (CMOS) detector, with the deepening of the damaged degree, point damage, half black line damage, as well as black lines cross damage are observed when laser energy density are 0.38, 0.64, 1.0 J/cm2. Enhancing laser energy density, black lines cross damaged region is thicker, and coverage area expands. Even if the laser energy density reaches 2.8 J/cm2, black line has covered most of the detector pixels, the detector still doesn′t completely lapse, the undamaged area can imaging. Based on the structure and working principle of CMOS, studying the damage mechanism by theoretical analysis, point damage is caused by the increase in leakage current due to structural defects resulting from thermal effects, and half black line damage and black lines cross damage are caused by signal interruption due to the device circuit fuses cutting.