离子束溅射（IBS）与电子束蒸发（EBE）是常用的SiO2薄膜制备方法。基于椭圆偏振法和全光谱拟合法，研究了离子束溅射和电子束蒸发两种工艺方法制备的SiO2薄膜的可见光与红外波段光学常数色散特性。在可见光波段的色散，SiO2薄膜的折射率均高于块体材料；在红外波段的色散，通过对特征吸收峰分析确定了SiO2薄膜的化学缺陷。研究结果表明：IBS SiO2薄膜的化学缺陷少于EBE SiO2薄膜，仅存在少量的H2O分子和Si-OH化学键，在EBE SiO2薄膜中，除这两种缺陷外还包含大量的Si-H化学键缺陷，说明EBE SiO2薄膜中的化学反应缺陷多于IBS SiO2薄膜，从而证明采用IBS工艺可有效控制SiO2薄膜的化学缺陷。

Ion beam sputtering (IBS) and electron beam evaporation (EBE) are the common methods for preparing SiO2 films. The dispersive properties of SiO2 films which are prepared by IBS and EBE methods are studied in the visible and infrared regions with the methods of ellipsometry and spectrum fitting. In the visible band, the refractive index of SiO2 films is higher than bulk materials; in the infrared band, chemical defects of the two kinds of films are determined by the position of absorption. The results show that chemical defects of IBS SiO2 film are less than EBE SiO2 films, and there is only a small amount of H2O molecules and Si-OH chemical bond in IBS SiO2 films. However, besides the two kinds of defects there are other large amounts of Si-H chemical bond defects in EBE SiO2 films. This implies that there are more defects resulting from water chemical reaction in EBE SiO2 films than that in IBS SiO2 films. Therefore, the chemical defects can be effectively controlled by IBS method.