对基于InGaN/GaN量子阱的蓝绿双波长发光二极管的材料生长和发光性质进行了研究.通过设计生长多组具有不同参量的外延结构，获得了优化的双波长量子阱结构参量，指出量子阱位置的分布、蓝绿阱间垒的宽度以及材料构成对量子阱发光性能均有较大影响.对双波长发光二极管器件光学性质进行了研究，结果表明，InGaN/GaN量子阱发光更依赖于In团簇形成的局域激子发光，从而导致了小电流下的反常光学现象.通过数值计算材料内部极化场的强度，对波长漂移的原因进行了解释，并通过双波长发光效率拟合分析了发光二极管“droop”效应可能的产生机理.

The growth conditions and optical properties of InGaN/GaN dual-wavelength light-emitting diodes structures were studied. The optimized dual-wavelength quantum well parameters were obtained by designing several groups of epitaxy structures with different parameters. The optical properties of the dual-wavelength light-emitting diodes devices were also studied. The results show that light emitting of quantum well depends on localized exciton emitting caused by In clusters, which also leads to abnormal optical phenomenon under small current. Mechanism of the dual-wavelength peaks drift was explained through numerical calculation of internal polarization field in InGaN/GaN quantum-well. Luminous efficiency under different drive current of dual-wavelength light-emitting diodes was investigated and the possible reason of "droop" effect was given.