为了提高传感器的品质因数，有效保护谐振器，提出了一种基于绝缘体上硅（SOI）-玻璃阳极键合工艺的谐振式微电子机械系统（MEMS）压力传感器的制作及真空封装方法。该方法采用反应离子深刻蚀技术（DRIE），分别在SOI晶圆的低电阻率器件层和基底层上制作H型谐振梁与压力敏感膜；然后，通过氢氟酸缓冲液腐蚀SOI晶圆的二氧化硅层释放可动结构。最后，利用精密机械加工技术在Pyrex玻璃圆片上制作空腔和电连接通孔，通过硅-玻璃阳极键合实现谐振梁的圆片级真空封装和电连接，成功地将谐振器封装在真空参考腔中。对传感器的性能测试表明：该真空封装方案简单有效，封装气密性良好；传感器在10 kPa~110 kPa的差分检测灵敏度约为10.66 Hz/hPa,线性相关系数为0.99 999 542。

To improve the quality factor of sensors and to protect resonators, the fabrication and waferlevel vacuum packaging methods for a Microelectromechanic System(MEMS) resonant pressure sensor was proposed based on Silicon On Insulator (SOI)glass anodic bonding technology. Through Deep Reactive Ion Etching (DRIE) process and buffered oxide etched releasing process, Htype resonant beams and pressure diaphragm of the sensor were fabricated on the low resistivity device layer and the substrate layer of SOI wafer,respectively,and a moveable mechanism was release by a SiO2 layer of the SOI wafer corroded by hydrofluoric acid flow. Finally, electrical connection and a cavity for the vibration of beams was implemented on the Pyrex glass piece by fine mechanical machining and the waferlevel vacuum packaging and electric connection of the resonators were achieved with SOIglass anodic bonding. Experimental results demonstrate that the packaging scheme is effective and easy to achieve with an excellent hermetic sealing, and the sensor has a differential sensitivity of 10.66 Hz/hPa and linear correlation coefficient of 0.999 995 in the range of 10 kPa to 110 kPa.