利用射频磁控溅射的方法在柔性PI衬底上制备ITO薄膜, 通过SEM(扫描电子显微镜)、XRD(X射线衍射仪)、四探针测试仪、分光光度计,分析了通氧量、溅射功率、工作气压及衬底温度对ITO薄膜表面形貌、成膜质量和光电特性的影响。结果显示: 在纯氩气环境下, 溅射功率为200W, 工作气压为1.5Pa, 在衬底温度为185℃~225℃时, 薄膜的光电特性最好, ITO薄膜的电阻率为3.64×10-4Ω·cm, 透过率为97%。

Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10-4 Ω·cm and transmittance of 97% are achieved.