In this paper, we study an original strategy to generate an infrared waveband microlaser by an integrated III–V-nanowire (NW)-based photonic array for on-chip interconnects. The optical modes of the III–V-NW-based photonic array are investigated for utilization as an all-in-one gain medium, waveguide, and cavity. Adequate designs of periodic arrays of InP NWs with different polarization TM and TE modes are studied by 3D electromagnetic simulation finite difference time domain to optimize the resonant active photonic crystal (hybrid Bloch modes) in the infrared band at 1.3 μm. According to our calculations, NWs larger than 0.2 μm in diameter are needed to conceive optic modes inside NW photonics in TM polarization. However, smaller NW photonics, such as 0.1 μm in diameter, can obtain only the TE mode inside the NWs. This phenomenon is theoretically illustrated by the dispersive curves of NW-based photonics. It aims at demonstrating that the slow velocity mode inside the NW photonics will cause amplification of lightwaves and generate microlasers in the infrared band at 1.3 μm. These studies are of prime importance for further microlaser integration to silicon-on-insulator (SOI) waveguides for on-chip optical interconnects.