肖特基二极管是太赫兹接收机的关键器件,通过在高频下对不同封装形式的肖特基二极管进行建模仿真,研究不同封装方式对肖特基二极管性能的影响。首先通过建立肖特基二极管的仿真模型,在高频结构仿真软件HFSS中对肖特基二极管在0~120 GHz频段进行仿真,得到该肖特基二极管的S参数,并对S参数仿真结果和实测结果进行对比,证明了该二极管模型的准确性。然后分别建立肖特基二极管的普通封装模型和肖特基二极管的倒装芯片(flip-chip)封装模型,并对这两种封装模型进行仿真,得到其在两种不同封装结构下的S参数,进而对两种不同封装方式的S参数的-3 dB带宽以及相位一致性进行对比分析。最终,对应用于太赫兹波段的肖特基二极管由于封装不同而带来的带宽以及相位的区别及其成因进行分析,论证了flip-chip封装更适合应用于太赫兹波段的肖特基二极管,与普通封装相比,该封装在高频下对肖特基二极管的电性能有比较大的改进。

Schottky diode is the critical component of terahertz receiver. The Schottky diode simulation model is established in HFSS to obtain the S-parameters of the Schottky diode in 0-120 GHz. The accuracy of the diode simulation model is proved by comparing S-parameters between simulated and measured results. The general packaging model and flip-chip packaging model of Schottky diodes are established, and two different S-parameters, -3 dB bandwidth and phase coherence are analyzed. The results show that the flip-chip packaging is more appropriate for THz Schottky diode than the general packaging, which can bring great improvement of electrical properties of Schottky diode in the high frequency applications.