采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点.首先,以1-硫代甘油为稳定剂,在水相溶液中制备出HgTe核量子点;然后,采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层,合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点.该合成方法仅需3个步骤,具有操作简单、成本低廉的优点.实验结果显示,当反应温度为90 ℃、反应溶液pH为11.0、反应加热回流时间为4 min时,HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%.

A simple method for HgTe/CdS/ZnS multi-shell quantum dots (QDs) synthesizing was developed.Firstly,HgTe core QDs were synthesized in aqueous solution with 1-thioglycerol as the stabilizer.Then,CdS and ZnS shells were grown on the surface of HgTe core by epitaxial growth method.The resultant HgTe/CdS/ZnS multi-shell QDs have stable near-infrared light-emitting property.This synthetic method contains only three steps with the advantages of simple operation and low cost.The experimental results indicate that HgTe/CdS/ZnS multi-shell QDs can reach the highest fluorescence quantum yield of 36% as the reaction solution (pH=11.0) is heated reflux for 4 min at 90 ℃.