Ⅴ族元素 As在碲镉汞中具有较小的扩散系数, 在非本征 p型掺杂中得到广泛应用, 在 p-on-n型高性能探测器及双色或多色探测器应用方面优势明显。对分子束外延掺 As碲镉汞薄膜的几种生长技术的基本原理进行了简单介绍, 并对各方法存在的优缺点进行了对比分析；同时对 As杂质在碲镉汞材料中的掺杂形态、杂质激活退火工艺及杂质激活率等进行了总结分析。对 MBE As掺杂在第三代多层膜结构器件的应用方面提出了建议。

The group V element arsenic is applied widely in extrinsic p-type doping HgCdTe for its low diffusion coefficient, and it has obvious superiority on the application of p-on-n high performance detectors and dual-band or multi-band detectors. This paper introduced the basic theory of As-doped HgCdTe thin film growth techniques by MBE, as well as the advantages and disadvantages of each were compared. It also analyzed the impurity doping form, the annealing technique of impurity activation and the activation rate. The suggestion has been proposed, which is about application in the third generation device that demonstrates a multilayer with As-doped by MBE.