Chinese Optics Letters, 2015, 13 (12): 121601, Published Online: Sep. 12, 2018
Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films
160.2900 Optical storage materials 310.6860 Thin films, optical properties 210.4770 Optical recording
Abstract
In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge 2 Sb 2 Te 5 phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.
Ke Zhang, Jincheng Lin, Yang Wang. Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films[J]. Chinese Optics Letters, 2015, 13(12): 121601.