利用湿法回流缩球的技术，使铟柱回流成铟球。在研究中心距为30 μm、面阵为320×256 的读出电路在回流缩球的过程中遇到了3 种异常现象，即铟球体积异常、铟球桥接和铟球偏离中心位置的现象。详细地介绍了这3 种现象产生的过程及背景，分析了产生这3 种现象的机理以及对器件性能和倒装互连的影响，并提出了相应的解决措施。

In this paper, indium bumps were achieved via wet reflow method. In the reflow soldering of the 320×256 read-out circuit array with the pitch size of 30 μm, three kinds of anomalies occurred, which were the abnormal volume of indium bumps, bridge joints of indium bumps, and off-centered indium bumps. The technical conditions and the formation of the three anomalies were introduced in detail. The formation mechanisms of the three anomalies and their effects on the device performance and flip-chip were analyzed, and then, the corresponding methods were proposed to avoid the failure.