采用磁控溅射法制备了厚度为6.5 μm的Mn1.95Co0.77Ni0.28O4组分的薄膜材料，把材料分别在400℃，500℃，600℃，700℃，800℃下进行后退火处理.结果表明，室温下的负电阻温度系数α295值随退火温度增加先增大后减小，而电阻率ρ295则是随退火温度增加逐渐减小的；在相同频率下，500℃退火样品的归一化噪声谱密度 (SV·VR/V2) 最小，700℃退火样品的归一化噪声谱密度最大.退火温度越高会造成越多的晶体缺陷，从而降低有效导热系数、增大时间常数τ和器件噪声.

Thin films of Mn1.95Co0.77Ni0.28O4 with a thickness of 6.5 μm were prepared by the magnetron sputtering method annealed at temperatures of 400℃, 500℃, 600℃, 700℃, 800℃ respectively. The negative temperature coefficient of resistivity (NTCR) of the films at room temperature α295 increases firstly, and then decreases with the growing annealing temperature. However, the resistivity of the films at room temperature ρ295 keeps decreasing with the growing annealing temperature. The sample annealed at 500℃ has the minimal normalized noise spectral density (SV·VR/V2), while that annealed at 700℃ has the maximal. The annealing process produces defects in the films, which lower the thermal conductivity and augment response time τ as well as the detector noise.