通过在有机发光二极管（OLED）的阳极与空穴传输层NPB之间加入m-MTDATA作为缓冲层来研究缓冲层对器件性能的影响。制备了ITO/m-MTDATA(d nm)/NPB(40-d nm)/Alq3(70 nm)/LiF(0.5 nm)/Al(40 nm)、ITO/ MoO3 (15 nm)/NPB(25 nm)/Alq3 (70 nm)/LiF(0.5 nm)/Al(40 nm)结构的器件，研究不同m-MTDATA厚度对OLED发光亮度、电流密度、电流效率等性能的影响。实验发现，当缓冲层的厚度为15 nm时，器件的启亮电压从未加缓冲层的13 V降到了9 V，最大发光亮度从未加缓冲层的5900 cd/m2增加到16300 cd/m2，是原来的2.76倍。最高的电流效率也由未加缓冲层的1.8 cd/A变为3.5 cd/A，是原来的1.94倍。然后在器件的氧化铟锡（ITO）与NPB之间插入了厚度为15 nm的MoO3缓冲层。与同厚度的m-MTDATA器件相比,插入MoO3缓冲层器件的启亮电压降低为8 V，最大亮度为13320 cd/m2，最大电流密度为6030.74 A/m2，最大的电流效率为3.06 cd/A。

This research investigates the effect of buffer layer on the performance of organic light emitting diodes (OLED) by adding m-MTDATA as buffer layer between anode and hole transport layer NPB. The devices with ITO/m-MTDATA(d nm)/NPB(40-d nm)/Alq3(70 nm)/LiF(0.5 nm)/Al(40 nm) and ITO/ MoO3 (15 nm)/NPB(25 nm)/Alq3(70 nm)/LiF(0.5 nm)/Al(40 nm) structures are prepared. The effects of m-MTDATA thickness on OLED brightness, current density, current efficiency and other properties are studied. It is found that the turn-on voltage of the device reduces from 13 V to 9 V when the thickness of the buffer layer is 15nm, and the maximum brightness of the device increases from 5900 cd/m2 to 16300 cd/m2, which is about 2.76 times as much as that of the device without buffer layer. The highest current efficiency also increases from 1.8 cd/A to 3.5 cd/A, which is 1.94 times as much as the device without buffer layer. Then the MoO3 buffer layer with the thickness of 15 nm is inserted in the device as a buffer layer between indium tin oxide(ITO) and NPB. Compared to m-MTDATA device with the same thickness, the turn-on voltage of the device with MoO3 buffer layer declines to 8 V, the maximum brightness is 13320 cd/m2, the maximum current density is 6030.74 A/m2, and the maximum current efficiency is 3.06 cd/A.