基于标准0.35 μm CMOS工艺设计了一种单光子雪崩二极管器件.采用p+n阱型二极管结构, 同时引进保护环与深n阱结构以提高单光子雪崩二极管性能；研究了扩散n阱保护环宽度对雪崩击穿特性的影响；对器件的电场分布、击穿特性、光子探测效率、频率响应等特性进行了分析.仿真结果表明：所设计的单光子雪崩二极管器件结构直径为10 μm, 扩散n阱保护环宽度为1 μm时, 雪崩击穿电压为13.2 V, 3 dB带宽可达1.6 GHz；过偏压为1 V、2 V时最大探测效率分别高达52%和55%；在波长500～800 nm之间器件响应度较好, 波长为680 nm时单位响应度峰值高达0.45 A/W.

A single photon avalanche diode was proposed based on the standard 0.35μm CMOS technology. The single photon avalanche diode was with the p+n well junction structure, the guard ring and deep n-well structures were introduced to improve the performance of the device. The influence of the diffusion n-well guard ring width on the breakdown characteristics was investigated. The typical characteristics such as electric field distribution, breakdown characteristics, photon detection efficiency and frequency response were analyzed. The simulation results show that, when the diameter of the proposed single photon avalanche diode device is 10 μm and the diffusion of n-wells width of the guard ring structure is 1 μm, the avalanche breakdown voltage is 13.2 V, the 3 dB bandwidth is up to 1.6 GHz. The maximal photon detection efficiency is as high as 52% and 55% when the excess bias voltage is 1 V and 2 V, respectively. The best responsivity is obtained within the spectral range wavelength of 500～800 nm, the peak unit responsivity is 0.45 A/W at the wavelength of 680 nm.