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退火工艺对含硅量子点SiCx薄膜光谱特性的影响

Influence of Annealing Technology on Spectral Properties of SiCx Thin Films Containing Silicon Quantum Dots

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摘要

采用磁控共溅射法并结合微波退火和快速光热退火工艺, 在不同退火温度下制备了含硅量子点的富硅SiCx薄膜。采用掠入射X射线衍射(GIXRD)、拉曼光谱和光致发光(PL)光谱技术对薄膜进行了表征, 研究了退火工艺对薄膜中硅量子点数量、尺寸、晶化率以及发光峰的影响。结果表明:与快速光热退火相比, 微波退火不但能降低硅量子点的形成温度(降低200 ℃), 而且还能降低β-SiC量子点的形成温度(降低100 ℃); 在相同退火温度下, 微波退火制备的硅量子点的数量更多、晶化率更高、光致发光峰更强; 采用1000 ℃温度的微波退火样品的硅量子点数量最多、尺寸最大(5.26 nm)、晶化率最高(74.25%)、发光峰最强, 说明微波退火能凝析出高质量的硅量子点。

Abstract

In this paper, the silicon-rich SiCx thin films with silicon quantum dots are prepared at different annealing temperatures by magnetron co-sputtering, microwave annealing and rapid thermal annealing. The thin films are characterized by grazing-incidence X-ray diffraction (GIXRD), Raman spectrum, and photoluminescence (PL) spectra technology. Influences of annealing technologies on the number and the size of silicon quantum dots, crystallization rate, and photoluminescence peak are discussed. The results show that compared to the rapid thermal annealing process, microwave annealing can not only lower the formation temperature of silicon quantum dots (200 ℃), but also reduce the β-SiC quantum dots formation temperature (100 ℃). At the same annealing temperature, the number, crystallization rate and photoluminescence peak intensity of the silicon quantum dots prepared by microwave annealing are much higher than that of the rapid thermal annealing. The number of the silicon quantum dots is the most, the silicon quantum dots size is the biggest (5.26 nm), the crystallization rate is the highest (74.25%), and the photoluminescence peak is the strongest when the temperature of microwave annealing reaches 1000 ℃. The results show that high-quality silicon quantum dots can be precipitated by microwave annealing.

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中图分类号:O484.5

DOI:10.3788/aos201737.0131002

所属栏目:薄膜

基金项目:国家自然科学基金(51362031)、西南地区可再生能源研究与开发协同创新中心项目(05300205020516009)

收稿日期:2016-08-23

修改稿日期:2016-09-06

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赵飞:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650500云南师范大学太阳能研究所, 云南 昆明 650500
杨雯:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650500云南师范大学太阳能研究所, 云南 昆明 650500
陈小波:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650500云南师范大学太阳能研究所, 云南 昆明 650500
杨培志:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650500云南师范大学太阳能研究所, 云南 昆明 650500

联系人作者:赵飞(18487073495@163.com)

备注:赵飞(1990—), 男, 硕士研究生, 主要从事碳化硅基硅量子点薄膜材料方面的研究。

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引用该论文

Zhao Fei,Yang Wen,Chen Xiaobo,Yang Peizhi. Influence of Annealing Technology on Spectral Properties of SiCx Thin Films Containing Silicon Quantum Dots[J]. Acta Optica Sinica, 2017, 37(1): 0131002

赵飞,杨雯,陈小波,杨培志. 退火工艺对含硅量子点SiCx薄膜光谱特性的影响[J]. 光学学报, 2017, 37(1): 0131002

被引情况

【1】徐国亮,刘富霞,路战胜,王冉. 外加电场对一维链式分子(SiO2)10电子结构和光谱的调制特性. 光学学报, 2018, 38(9): 902002--1

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