InGaAsN/GaAs量子阱中进行铍(Be)元素重掺杂能显著提高其光学性质, 并且发光波长发生了红移。X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN(Be)/GaAs量子阱在退火过程中的应力释放。对比退火前, 退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移; 而对于掺铍的量子阱样品而言, 这样的偏移要小很多。

Heavily doping beryllium in the InGaAsN/GaAs quantum well (QW) can improve the optical properties significantly, while the emission wavelength is red-shifted. The X-ray diffraction (XRD) rocking curves provide clear-cut evidence that the doping of Be suppresses the strain relaxation in InGaAsN(Be)/GaAs QW during thermal annealing. An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed, while the shift for the Be-doped QW was much smaller than undoped QW.