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光控主动频率选择表面制作及光电性能研究

Fabrication and Photoelectric Properties of Optically Controlled Active Frequency Selective Surface

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摘要

为简化主动频率选择表面(FSS)器件结构,提高其谐振频率的操控性能,提出一种利用光电导薄膜的光照导电特性控制FSS结构尺寸变化的光控主动FSS。从理论角度阐述了FSS结构尺寸与中心谐振频率的关系。以十字带通型光控主动FSS为例,采用CST软件仿真得到光照前后的中心谐振频率,频率由23 GHz变为28 GHz。采用镀膜、电子束蒸发及光刻等工艺制作出光控主动FSS样件,分析了光电导薄膜中掺杂成分、退火温度、退火时间及光照频率、光照功率等因素对其光电性能的影响。结果显示:调节CdS、CdSe的分子数比(1∶1~5∶1)可改变敏感波长;调节CdCl2、InCl3、CuCl2的比例可改变亮暗方块电阻比,实验中分子数比为(3.6∶2.6∶1.3)时效果最佳;退火温度为750 ℃、退火时间为30 s时光电导薄膜光电特性与欧姆接触达到峰值。测试结果表明:在功率为200 mW/cm2与波长为0.6 μm的光照条件下,光控主动FSS的中心谐振频率从光照前的23.8 GHz变为28 GHz,与仿真结果一致。

Abstract

In order to simplify the structure of the active frequency selective surface (FSS) and improve the control performance of its resonant frequency, we propose an optically controlled active FSS that uses the photoconductive properties of the photoconductive thin film to change the structure size of the FSS. The relationship between the structure size of FSS and the center resonant frequency is elaborated in theory. Taking the optically controlled active FSS of cross dipole slot-element as an example, the center resonance frequency is changed from 23 GHz (before illumination) to 28 GHz (after illumination)by software CST simulation. The optically controlled active FSS structure is fabricated by coating, electron beam evaporation and photolithography. The influence of the doping amount, annealing temperature, annealing time, light frequency and light power on the photoelectric properties of the photoconductive thin films is analyzed. The results show that the sensitivity wavelength changes with the molecular number ratio of CdS and CdSe (1∶1~5∶1); the molar molecular number of CdCl2、InCl3 and CuCl2 could change the ratio of bright square resistance and dark square resistance, and the effect is best when the molecular number ratio is 3.6∶2.6∶1.3; with annealing temperature of 750 ℃ and annealing time of 30 s, the photoelectric characteristics and ohmic contact of photoconductive thin film reach peak. The test results show that the center resonance frequency of optically controlled active FSS is changed from 23.8 GHz to 28 GHz before and after illumination in the conditions of 200 mW/cm2 light power and 0.6 μm light wavelength, which is consistent with the simulation results.

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中图分类号:TN713;O472+.3

DOI:10.3788/aos201838.0524002

所属栏目:表面光学

基金项目:国家自然科学基金(11474037,11474041)

收稿日期:2017-10-17

修改稿日期:2017-12-26

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作者单位    点击查看

王君:长春理工大学光电工程学院, 吉林 长春 130022
孙艳军:长春理工大学光电工程学院, 吉林 长春 130022
纪雪松:辽沈工业集团有限公司, 辽宁 沈阳 110045
王丽:长春理工大学光电工程学院, 吉林 长春 130022
王越:长春理工大学光电工程学院, 吉林 长春 130022
冷雁冰:长春理工大学光电工程学院, 吉林 长春 130022

联系人作者:孙艳军(custsun@126.com)

备注:王君(1992-),女,硕士研究生,主要从事先进光学系统设计与制造技术方面的研究。E-mail: wjwjun@126.com

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引用该论文

Wang Jun,Sun Yanjun,Ji Xuesong,Wang Li,Wang Yue,Leng Yanbing. Fabrication and Photoelectric Properties of Optically Controlled Active Frequency Selective Surface[J]. Acta Optica Sinica, 2018, 38(5): 0524002

王君,孙艳军,纪雪松,王丽,王越,冷雁冰. 光控主动频率选择表面制作及光电性能研究[J]. 光学学报, 2018, 38(5): 0524002

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