根据反向并联二极管的外围结构和材料构成, 以四端口S参数包的形式建立了二极管结外围无源结构的三维电磁模型, 与非线性仿真软件中的肖特基结模型结合起来建立太赫兹二极管对的完整模型, 这样的处理方法提高了计算机仿真的准确性。分谐波混频电路制作在12 ?滋m厚度的砷化镓基片上, 单片电路悬置安装在本振和射频中间剖开的减高波导腔体内。在本振5 mW功率注入时混频单片在330 GHz的频带范围内最小插损为10 dB。因为单片集成电路以四个梁式引线与波导外壁柔性连接, 一端固定在波导壁上, 混频单片电路能够释放腔体随温度变化而产生的机械应力。

According to the three-dimensional structure featuring variety of materials around an anti-parallel pair of planar Schottky diodes barrier, the 3D-circuit around the diode barrier can be calculated as a four-port diode modal S-parameter package, and the S-parameters produced by the electromagnetic field solver connecting to the non-linear model of the Schottky diode barrier were incorporated into the non-linear circuit simulator as the diode′s whole model, and by this way the whole monolithic mixing circuit′s behavior could be modeled more accurately. The monolithically integrated 330 GHz sub-harmonic mixing circuit was fabricated on a 12 ?滋m thick GaAs membrane, and it was suspended in a LO and RF reduced height waveguide split block. The MMIC demonstrated performance with a best double-sideband-mixer conversion loss of 10 dB with 5 mW of LO incident power at 330 GHz. It could withstand some mechanic pressure when its outer environment temperature change, because it was mounted via four flexible beam-leads and a fixed end in a waveguide block.