为了有效降低GaAs表面态密度，获得稳定的高性能钝化膜，使用联氨溶液钝化GaAs(100)表面。通过光致发光对联氨溶液浓度、Na2S浓度和钝化时间进行了优化。联氨溶液钝化后GaAs样品的PL比未处理的增加了1.22倍。采用X射线光电子能谱和原子力显微镜分析了联氨溶液钝化前后GaAs的表面成分和形貌。结果表明，联氨溶液钝化GaAs表面可以有效地去除表面氧化物，形成均匀、平整的GaN钝化层。通过表面稳定性测试发现，钝化后的GaAs表面在空气中放置数天，光致发光强度未见明显的退化(30 d内PL强度降低7%)，说明钝化后GaAs表面的稳定性良好。

In order to effectively reduce the density of GaAs surface states and obtain a stable high-performance passivation film, hydrazine solution is used to passivate the surface of GaAs (100).The concentration of hydrazine solution, the Na2S concentration, and the passivation time were optimized by photoluminescence. The PL intensity of the hydrazine concentration passivated GaAs samples is 1.22 times higher than non-passivated. The surface composition and morphology of GaAs before and after passivation of hydrazine solution were analyzed by X-ray photon spectroscopy and atomic force microscopy. Experimental results indicate that the surface oxides can be removed by the hydrazine solution effectively, and a uniform, flat GaN passivation layer can be formed on the surface. Through the surface stability measurement, it is found that the PL intensity of passivated GaAs surface does not have obvious degradation after several days in the open air, indicating that the surface of the GaAs after passivation is stable.