针对体硅的加工应用, 开展皮秒紫外激光三维刻蚀单晶硅工艺研究。通过工艺实验, 得出在激光脉冲能量6 μJ, 固定XY点间距4 μm, 在单晶硅上刻蚀600 μm×600 μm方槽, 单次去除的深度在1 μm, 单次加工用时0.5 s, 加工的侧壁在14°, 可以获得较好的200 μm深度的三维结构。 皮秒紫外激光体硅加工在工艺流程上更为简洁, 加工效率高, 对环境污染小, 设备成本小。

Investigation on the process of three-dimensional etching of single crystal silicon by picosecond ultraviolet laser was carried out to aim the application of processing the bulk silicon. As a good result, a three-dimensional structure with the depth of 200 μm and the extent of 600 μm×600 μm can be obtained by optimizing laser parameters at pulse energy of 6 μJ, constant laser spot distance of 4 μm, processing angle in side wall of 14°, single removal depth of 1 μm and single processing time of 0.5s. UV picosecond laser processing on bulk silicon is more concise, it has more advantages such as high processing efficiency, low environmental pollution, and low equipment cost.