相比用于制备晶体材料的化学气相输运(Chemical Vapor Transport, CVT)方法，近空间气相输运沉积(Close-spaced Vapor Transport Deposition, CSVT)及气相输运沉积(Vapor Transport Deposition, VTD)方法不为人们所熟知。近几年来，气相输运沉积逐渐应用于锑基薄膜(Sb2Se3、Sb2S3及Sb2(Se,S) 3)、锡基薄膜(SnS、SnS2)及铋基薄膜(Bi2Se3、Bi2Te3)等材料的制备，有可能成为一种重要的材料制备方法。本文综述了气相输运沉积用于化合物薄膜制备 的研究进展，对其特点进行分析，并对其发展趋势进行了展望。

Compared with the chemical vapor transport (CVT) method used for preparation of crystals, close-spaced vapor transport deposition (CSVT) and vapor transport deposition (VTD) are less well known. In recent years, vapor transport deposition has been gradually applied to the preparation of antimony-based thin films (Sb2Se3, Sb2S3 and Sb2 (Se, S)3), tin-based thin films (SnS, SnS2) and bismuth-based thin films (Bi2Se3, Bi2Te3) and so on, which may become an important method for material preparation. In this paper, the research progress of vapor transport deposition for compound thin films is reviewed, its characteristics are analyzed, and its development trend is prospected.