微型发光二极管(μLED)是当今国际最前沿的显示技术之一, 它一般指单个尺寸小于50 μm的LED阵列。μLED相对于液晶显示(LCD)、有机发光二极管(OLED)显示等技术有其独特的优势: 寿命长、响应时间短、亮度高。最重要的是, 它可以实现高度集成显示, 既包括像素密度远远高于常规显示技术的高PPI显示器件, 也包括我们首次提出的集成了某些非显示元件的超大规模集成半导体信息显示器件(HISID)。在许多显示技术的指标上, μLED的性能都很优异。但是, 由于μLED将常规LED器件的尺寸大大缩小, 且往往密度提高, 因此产生了许多新的技术和物理上的挑战, 例如巨量转移技术、全彩化显示等, 所以μLED尚未实现真正意义上的产业化。本文对高度集成μLED显示技术的研究和发展情况进行了较系统的论述, 首先对μLED的基本原理和结构进行了介绍, 然后对其重点核心技术进行了分类研究和点评, 最后对μLED显示技术的发展方向及其应用前景做出了分析。

Micro light-emitting diode(μLED) is one of the most cutting-edge display technologies in the world. It generally refers to the LED array with a single mesa size less than 50 microns. Compared with liquid crystal display(LCD) and organic light emitting diode(OLED) display, μLED display technology has its unique advantages: long lifetime, short response time, and high brightness. Most importantly, it enables the realization of highly integrated displays, which includes both high-PPI displays with much higher pixel densities than conventional display technologies, and highly integrated semiconductor information displays(HISID) that have been proposed first by us and contain certain non-display components. In many figures of merit of display technology, μLEDs perform excellently. However, as μLEDs greatly reduce the size of conventional LED devices and typically have an increased device density, many new technical and physical challenges have arisen, such as mass transfer technology, full-color display, etc. Therefore, μLEDs have not yet achieved any real industrialization. In this paper, the highly integrated μLED display technology research and progress are described systematically. First of all, the basic principle and structure of μLEDs are introduced, followed by the classification and review of the key technologies. Finally, the development trends and application prospects of the μLED display technology are analyzed.