在热注入法制备全无机钙钛矿CsPbBr₃量子点的过程中，增加使用短链的噻吩?3?硼酸，与长链烷基链配体一起形成量子点表面钝化层，被证明是提高量子点稳定性的有效方法。由于噻吩?3?硼酸中S原子与量子点表面Pb之间有更强的范德瓦尔斯力，可以在全无机钙钛矿量子点表面形成更加稳定的钝化层，从而有效抑制高温环境下CsPbBr₃量子点表面缺陷的产生，以及由此引起的非辐射跃迁过程。对比实验表明，在120 ℃加热70 min的条件下，基于常规的长链配体的CsPbBr₃量子点，其荧光强度大幅衰减到初始值的11%，同时PLQY从50.7%下降到4.5%。基于噻吩?3?硼酸配体表面修饰的CsPbBr₃量子点，在相同热处理条件下荧光强度衰减到初始值的51%，相应的PLQY从66.7%下降到32.7%。红外光谱证明该新型配体的加入实现了更稳定的量子点表面钝化，从而有效提高了量子点材料的荧光量子效率和热稳定性。

All-inorganic perovskite CsPbBr₃ quantum dots (QDs) was synthesized via hot injection with their surfaces partically passivated with thiophene-3-boronic acid in addition to the commonly used long-chain ligand, which was demonstrated to be effective to improve the stability of the colloids. Due to the stronger van der Waals force between thiophene-3-boronic acid and CsPbBr₃ QDs arising from the interaction between S in the thiophene ring and surface Pb of the QDs, a more stable passivation layer was formed, which effectively inhibited the of surface traps upon heating. The density of surface defect states that was responsible for the non-radiative recombination was prohibited. Comparative study was conducted under 120 ^oC heating for 70 minutes. The photoluminescence (PL) intensity of the prepared CsPbBr₃ quantum dots was greatly reduced to 11% that of the initial value, while PLQY decreased from 50.7% to 4.5%. For CsPbBr₃ quantum dots with thiophene-3-boronic acid treatment, the PL intensity was decreased to 51% the initial value, meanwhile PLQY decreased from 66.7% to 32.7%. The exchange of surface ligand, as confirmed by FTIR, was for the improved stability of the CsPbBr₃ quantum dots, and could lead to higher PLQY and improved thermal stability.